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Job ID: 61465

Location: USA - ARIZONA - TEMPE

Relocation Provided: Domestic/In-Country

Education Required: Masters

Experience Required: 3 - 5


Position Description:
The RF Division (RFD) is the global leader for RF power semiconductor solutions for the wireless infrastructure equipment market. The division designs high-power RF LDMOS and GaAs discrete transistors, RFIC's and modules for infrastructure applications. http://www.freescale.com/rf

Freescale Semiconductor, Inc. (NYSE:FSL, FSL.B) is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. Freescale became a publicly traded company in July 2004 after more than 50 years as part of Motorola, Inc. The company is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale, a member of the S&P 500®, is the third largest independent semiconductor company in the U.S. http://www.freescale.com


Position Requirements:
Main responsibilities include the design and development of High Power RF Transistors for the wireless infrastructure markets. Design work involves low impedance transistor matching networks including integrated passives, wire bonds, MOSCAPs, packaging interfaces and PCB board level matching. The design process uses a combination of measurement based techniques (e.g. loadpull data, etc) and CAD software with the use of linear and non-linear models. The design process will make use of Agilent’s ADS, 3D and planar electromagnetic simulation tools. The position will require for the individual to work closely with device engineers, product engineers, modeling engineers and manufacturing personnel for successful and timely product introduction.


Position Attributes:
Candidate will hold a minimum of a MS degree (PhD is preferred), in electrical engineering - physics or related technical field and have experience in designing high-power RF transistor internal-matching networks using LDMOS or GaAs HFET technologies. The engineer must have a strong background on Microwave and RF engineering with an emphasis on several of the following areas:
• Hands-on experience with board level tuning and optimization of matching networks.
• Microwave measurement techniques (S-parameters, loadpull setups, VNA calibration techniques, spectrum analyzers, power meters, etc).
• Understanding and development of advanced RF/microwave measurement techniques
• Working knowledge with Agilent's Advanced Design System (ADS), Ansoft's High Frequency Structure Simulator (HFSS) and planar electromagnetic solvers (Sonnet's Em and/or Agilent's Momentum)
• Solid understanding concerning circuit instability and strategies to resolve them.
• Strong communication skills



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Location: TEMPE, AZ 85284
Job category: Engineering
Position type: Full Time, Employee
Required education: Master's Degree